Patentix Co., Ltd.
[World’s first] Succeeded in forming rutile structure germanium dioxide (r-GeO2) film on SiC using PhantomSVD (phantom localized vapor deposition) method
―Major progress toward the realization of r-GeO2 power devices― ……
Ritsumeikan University Research Organization’s Kentaro Kaneko Laboratory (Professor Kentaro Kaneko/RARA Fellow) and Patentix Inc. (Location: Kusatsu City, Shiga Prefecture, Representative Director: Toyosuke Ebi) are jointly working to develop a material that is attracting attention as a next-generation semiconductor material. For the first time in the world, we succeeded in forming a film of rutile-structured germanium dioxide (r-GeO2) on SiC using the PhantomSVD (phantom localized vapor deposition) method.
Patentix Inc. is a venture company originating from Ritsumeikan University that is conducting research and development of
semiconductor substrates and power devices using ultra-wide bandgap semiconductor (UWBG) material “germanium dioxide.” This result is a major achievement that shows the possibility of using SiC, which has excellent heat dissipation, to solve the problem of low thermal conductivity of the substrate, which has been a problem in the development of oxide semiconductor power devices. .
[Image 1: https://prtimes.jp/i/128234/2/resize/d128234-2-b402d9b5951eae2de019-1.jpg&s3=128234-2-4fa56a76905a30948d001d88764298a3-3900×1222.jpg]
[Image 2: https://prtimes.jp/i/128234/2/resize/d128234-2-9ee632242c24ec75b4e2-0.png&s3=128234-2-fca3f35dab6e6f3e3d173854fffdb25c-3900×1120.png ]
Rutile structure germanium dioxide (r-GeO2) has an even larger bandgap than silicon carbide (SiC) and gallium nitride (GaN), so r-GeO2 transistors and diodes can be made with high breakdown voltage, high output, and high efficiency ( It is expected to have excellent power device characteristics such as low loss. Japan is leading the world in the development of r-GeO2 power devices, and Patentix Inc. has been conducting research and development of r-GeO2 epiwafers since its establishment in December 2022.
In addition, Patentix Co., Ltd. uses a uniquely developed PhantomSVD (phantom localized vapor deposition) method to form films, and PhantomSVD has excellent cost performance as it can use safe and inexpensive raw materials. In addition, crystal growth is possible using a principle different from that of conventional CVD methods that use a solution in the form of a mist, making it possible to synthesize thin films that are safer and more secure.
2. Current results and future plans
Ritsumeikan University and Patentix Co., Ltd. are collaborating to form a film on SiC using phantom SVD (phantom localized vapor deposition) method of “rutile-structured germanium dioxide
(r-GeO2),” which is attracting attention as a next-generation semiconductor material. It was the first in the world to succeed. This result was announced at the Ritsumeikan University Graduate School of Science and Engineering at the Fall Meeting of the European Materials Research Society (E-MRS), Europe’s largest materials society, which is being held in Warsaw, Poland from September 18th to 21st, 2023. Presented by Yuji Shimizu of the Graduate School of Technology (also director of Patentix Inc.), using SiC, which has excellent heat dissipation, to solve the problem of low thermal conductivity of the substrate, which has been a problem in the development of oxide semiconductor power devices. This was a great result that shows the possibility of solving the problem. In the future, we will continue to develop high-quality r-GeO2 epitaxial film formation technology by evaluating the electrical properties of r-GeO2 thin films and defects present in the films.
[Image 3: https://prtimes.jp/i/128234/2/resize/d128234-2-4031ed921037965701e2-2.jpg&s3=128234-2-30c2f1cab17897aeb63e153196b90cfe-125×127.jpg] Photo explanation: Photo of rutile structure r-GeO2 grown on Si(111)/3C-SiC(111). The ungrown area on the left is a masking mark for film thickness measurement.
[Image 4: https://prtimes.jp/i/128234/2/resize/d128234-2-a5b9e971e22dd1d0721c-3.jpg&s3=128234-2-a9947640285908cacab010182057f323-307×160.jpg ]
Structure description: An r-GeO2 film was formed on a <111More details about this release:
Patentix Co., Ltd.