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Home » CGD Introduces New ICEGAN GAN Power IC to Deliver Highest Efficiency in Data Centers, Inverters, and Industrial SMPS

CGD Introduces New ICEGAN GAN Power IC to Deliver Highest Efficiency in Data Centers, Inverters, and Industrial SMPS

Cambridge GaN Devices Ltd.
CGD Introduces New ICEGAN GAN Power ICs to Deliver Highest Levels of Efficiency in Data Centers, Inverters, and Industrial SMPSs
Enclosed in a thermally packaged package, the P2 family offers extremely high electrical performance to reliably support demanding high-power applications.
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Cambridge GaN Devices (CGD) (https://camgandevices.com/), a fabless cleantech semiconductor company developing energy-efficient GaN-based power devices to enable environmentally friendly electronics, is launching new die and new packaging. We announced a component with the lowest level of on-resistance (RDS(on)) designed with The new products offer the benefits of GaN in high-power applications such as data centers, inverters, motor drives, and industrial power supplies. The new ICeGaN(TM) P2 series ICs feature RDS(on) levels as low as 25mΩ, supporting multi-kW power levels with highest efficiency.
[Image: https://prtimes.jp/i/124617/9/resize/d124617-9-47f9f19b025445503309-0.png&s3=124617-9-450c7ba263289d9ebc5392de62e9e464-1950×1994.png ]
Andrea Bricconi | Chief Commercial Officer, CGD
“The explosive growth of AI and the dramatic increase in power consumption are driving data center system designers to prioritize the use of GaN for high-power, efficient power solutions. The new series of Power GaN ICs is an important step for CGD as we aim to provide our customers and partners with higher power densities of over 100kW per rack in response to the latest TDP requirements driven by networking trends. In motor control inverters, developers are turning to GaN to reduce heat generation and provide compact, long-life system power. In addition to simplifying gate driver design and reducing system cost, the P2 series ICs feature advanced high-performance packaging for these applications. It is the perfect choice for you.
ICeGaN ICs incorporate on-chip Miller clamps to suppress shoot-through losses during high-speed switching and implement 0V turn-off to minimize reverse conduction losses, making them ideal for discrete e-mode GaN and other It has superior performance compared to existing technology. The newly adopted package has a low thermal resistance of 0.28K/W, which is equivalent to or better than products currently on the market. Additionally, the dual-sided DHDFN-9-1 (Dual Heat Spreader DFN) package features a dual-gate pinout for optimal PCB layout and easy paralleling for scalability and multiple It has the feature of being easy to use for kW applications. The new package also features a wettable flank that improves productivity and simplifies optical inspection.
The new ICeGaN power IC P2 series is currently sampling. The family is available in four products with RDS(on) levels of 25 mΩ and 55 mΩ and rated currents of 60 A and 27 A, with a footprint of 10 x 10 mm and BHDFN-9-1 ( sealed in the bottom heat spreader (DFN). Like other CGD ICeGaN products, the P2 series can be driven using standard MOSFET or IGBT drivers.
Demo boards featuring the new P2 device include a single-leg demo board for a 3-phase automotive inverter developed in collaboration with IFP Energies nouvelles, a French public research and development institute, and a 3kW totem-pole power factor correction demo board. Two types are available:
The new P2 series ICeGaN GaN power ICs and demo boards are on display at CGD booth #7 643 at the PCIM exhibition at Nürnberg Messe in Nuremberg, Germany from June 11 to 13, 2024.
About Cambridge GaN Devices
Cambridge GaN Devices (CGD) designs, develops, and markets GaN transistors and ICs that represent breakthroughs in energy efficiency and miniaturization. CGD’s mission is to bring innovation to everyday life by providing energy-efficient GaN solutions. CGD has demonstrated the suitability of ICeGaN(TM) technology for high-volume manufacturing and is rapidly expanding its manufacturing and customer partnerships. CGD, a fabless company, is a spin-out from the University of Cambridge. Founder and CEO Dr. Giorgia Longobardi and CTO Professor Florin Udrea have strong ties to the university’s world-renowned High Voltage Microelectronics and Sensors (HVMS) group. CGD’s ICeGaN HEMT technology is protected by a strong and continuously expanding IP portfolio earned through a commitment to innovation. The CGD team’s technical and commercial expertise and extensive experience in the power electronics market are the foundation for market acceptance of the company’s proprietary technology.
More details about this release:
https://prtimes.jp/main/html/rd/p/000000009.000124617.html



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